Electrical characterizations of paraelectric BST thin films up to 1 THz : realization of microwave phase shifters
MARTEAU, Aurélien
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
LIPPENS, Didier
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
< Reduce
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Language
en
Article de revue
This item was published in
Ferroelectrics. 2007, vol. 353, p. 29-37
Taylor & Francis: STM, Behavioural Science and Public Health Titles
English Abstract
BST thin films have been deposited with a sol-gel technique on 4cm 2 sapphire. Electrical characterizations have been performed in a very large frequency range. From 1 kHz to 500 GHz, the dielectric constant ϵ r is around ...Read more >
BST thin films have been deposited with a sol-gel technique on 4cm 2 sapphire. Electrical characterizations have been performed in a very large frequency range. From 1 kHz to 500 GHz, the dielectric constant ϵ r is around 300 with quasi no frequency dispersion. In the 500 GHz to 1 THz range, the existence of a Debye relaxation mode is postulated. Varactors made with these BST films show a decrease of their capacitance by a factor of about 1.7 under 40 volts of bias. Phaseshifters have been realized with these varactors: a bias of 40 volts at 30 GHz permits to obtain a phaseshift of 360 degrees.Read less <
English Keywords
Thin films
BaSrTiO3
electrical properties
terahertz
microwave
phaseshifters
Origin
Hal imported