Contact resistance and shot noise in graphene transistors
Langue
en
Article de revue
Ce document a été publié dans
Physical Review B: Condensed Matter and Materials Physics (1998-2015). 2009-02-15, vol. 79, n° 7, p. 075428 (1-6)
American Physical Society
Résumé en anglais
Potential steps naturally develop in graphene near metallic contacts. We investigate the influence of these steps on the transport in graphene Field Effect Transistors. We give simple expressions to estimate the voltage-dependent ...Lire la suite >
Project ANR
Electronic EPR Source - ANR-07-NANO-0011