Ultrafast carrier dynamics in Br+ -bombarded InP studied by time-resolved terahertz spectroscopy
Language
en
Article de revue
This item was published in
Physical Review B: Condensed Matter and Materials Physics (1998-2015). 2008-12, vol. 78, n° 23, p. 235206 (1-7)
American Physical Society
English Abstract
Ultrafast dynamics of charge carriers in Br+ -bombarded InP were studied using time-resolved terahertz spectroscopy. Carrier lifetimes and mobilities in various samples prepared with irradiation doses spanning from 109 up ...Read more >
Ultrafast dynamics of charge carriers in Br+ -bombarded InP were studied using time-resolved terahertz spectroscopy. Carrier lifetimes and mobilities in various samples prepared with irradiation doses spanning from 109 up to 1012cm-2 were determined. The lifetime of photoexcited carriers appears to be determined primarily by the density of defects resulting from host-atom displacements while it is not significantly influenced by the Br-atom implantation. In the most irradiated sample, a carrier lifetime as short as 300 fs was found. All samples exhibit a high mobility (3000-900cm2V-1s-1) ; the lower values correspond to a smaller irradiation dose. In selected samples, the density of traps along with electron and hole lifetimes was determined.Read less <
Origin
Hal imported