Monitoring tantalum nitride thin film structure by reactive RF magnetron sputtering: Influence of processing parameters
Idioma
en
Article de revue
Este ítem está publicado en
Surface and Coatings Technology. 2015, vol. 284, p. 192–197
Elsevier
Resumen en inglés
Tantalum nitride thin films were deposited onto WC-6%Co substrates using reactive RF magnetron sputtering. Their structure and microstructure were studied and analyzed according to processing parameters. It has been ...Leer más >
Tantalum nitride thin films were deposited onto WC-6%Co substrates using reactive RF magnetron sputtering. Their structure and microstructure were studied and analyzed according to processing parameters. It has been demonstrated that the weight ratio of hexagonal TaN (h-TaN) to face centered cubic TaN (fcc-TaN) strongly depends on adatoms mobility on the substrate surface. In particular, growth conditions promoting adatoms mobility, i.e. low N2 partial pressure, total gas pressure, target-to-substrate distance as well as high target power density, promote the formation of h-TaN structure. Both exclusively fcc-TaN and exclusively h-TaN films were synthesized. A possible mechanism for the stabilization of those structures is discussed.< Leer menos
Palabras clave en inglés
Tantalum nitride
Thin film
Reactive sputtering
Structure control
Quenching
Orígen
Importado de HalCentros de investigación