Phenomenological characterization of photoactive centers in Bi12TiO20 crystals
Language
en
Article de revue
This item was published in
Journal of Applied Physics. 2007, vol. 101, n° 4, p. 043101
American Institute of Physics
English Abstract
We report optical and electrical measurements contributing for a better characterization of the relevant photoactive center levels in undoped photorefractive Bi12 TiO 20 BTO crystals grown in Brazil. Comparative results ...Read more >
We report optical and electrical measurements contributing for a better characterization of the relevant photoactive center levels in undoped photorefractive Bi12 TiO 20 BTO crystals grown in Brazil. Comparative results for Pb-doped BTO and Bi12 GaO 20 are also reported. A center responsible for photochromism was identified at 0.42– 0.44 eV, probably below the conduction band CB. The main electron and hole donor center is detected at 2.2 eV from the CB and the equilibrium Fermi level is pinned at this level. Other localized centers were identified at different positions in the band gap and their relation with the behavior of BTO under different wavelengths and operating conditions is discussed with particular attention to holographic recording.Read less <
English Keywords
Inorganic compounds
Bismuth
Titanium
BTO
Oxides
Crystal growth
Measurements
Origin
Hal imported