Structural and electrical properties of BaTi1−xZrxO3 sputtered thin films: effect of the sputtering conditions
Idioma
en
Article de revue
Este ítem está publicado en
Thin Solid Films. 2004, vol. 467, n° 1-2, p. 54-58
Elsevier
Resumen en inglés
aTi1−xZrxO3 thin films have been prepared on Si and Pt/TiO2/SiO2/Si substrates by radio-frequency magnetron sputtering varying the deposition parameters, such as the chamber pressure, the substrate temperature and the gas ...Leer más >
aTi1−xZrxO3 thin films have been prepared on Si and Pt/TiO2/SiO2/Si substrates by radio-frequency magnetron sputtering varying the deposition parameters, such as the chamber pressure, the substrate temperature and the gas composition. The films have been probed by X-ray Diffraction (XRD), Wavelength Dispersive Spectrometry (WDS), Scanning Electron Microscopy (SEM) and Rutherford Backscattering Spectrometry (RBS)...< Leer menos
Palabras clave en inglés
Structural properties
Thin films
BaTi1−xZrxO3
Sputtering
Dielectric properties
Orígen
Importado de HalCentros de investigación