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Investigation of photoelectric properties of ZnSe:Cr and ZnTe:V:Al by picosecond four-wave mixing technique

KADYS, Arunas
Institute of Materials Science and Applied Research
SUDZIUS, Markas
Institute of Materials Science and Applied Research
JARAŠIUNAS, Kestutis
Institute of Materials Science and Applied Research
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Idioma
en
Article de revue
Este ítem está publicado en
Acta Physica Polonica A. 2004, vol. 105, n° 6, p. 651-657
Polish Academy of Sciences. Institute of Physics
Resumen en inglés
Role of deep impurity levels in carrier generation, transport, and recombination were investigated in bulk ZnSe:Cr and ZnTe:V:Al crystals by four-wave mixing technique...
Palabras clave en inglés
Photoelectric properties
Technics
Inorganic compounds
Zinc tellure
Zinc Selenium
Aluminium
Vanadium
Chrome
DOI
Orígen
Importado de Hal
Centros de investigación