Investigation of photoelectric properties of ZnSe:Cr and ZnTe:V:Al by picosecond four-wave mixing technique
Langue
en
Article de revue
Ce document a été publié dans
Acta Physica Polonica A. 2004, vol. 105, n° 6, p. 651-657
Polish Academy of Sciences. Institute of Physics
Résumé en anglais
Role of deep impurity levels in carrier generation, transport, and recombination were investigated in bulk ZnSe:Cr and ZnTe:V:Al crystals by four-wave mixing technique...
Role of deep impurity levels in carrier generation, transport, and recombination were investigated in bulk ZnSe:Cr and ZnTe:V:Al crystals by four-wave mixing technique...< Réduire
Mots clés en anglais
Photoelectric properties
Technics
Inorganic compounds
Zinc tellure
Zinc Selenium
Aluminium
Vanadium
Chrome
Origine
Importé de halUnités de recherche