Photoluminescence of GaN microcrystallites prepared by a new solvothermal process
BARRIERE, Albert-Serge
Laboratoire d'études de l'intégration des composants et systèmes électroniques [IXL]
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Laboratoire d'études de l'intégration des composants et systèmes électroniques [IXL]
Language
en
Article de revue
This item was published in
Materials Research Bulletin. 2002, vol. 1, n° 5, p. 841-848
Elsevier
English Abstract
GaNmicrocrystallites have been prepared by asolvothermalprocess. The influence of the synthesis temperature on the crystallinity of the resulting GaN has been studied on three samples, prepared at 400, 600 and 800°C in the ...Read more >
GaNmicrocrystallites have been prepared by asolvothermalprocess. The influence of the synthesis temperature on the crystallinity of the resulting GaN has been studied on three samples, prepared at 400, 600 and 800°C in the same pressure conditions (150 MPa) and duration (6 h). The resulting powders were characterized by several techniques: X-ray diffraction to evaluate the reaction rate, scanning electron microscopy (SEM) to determine the morphology and size of the microcrystallites and photoluminescence to evaluate the quality of the powders.Read less <
English Keywords
Nitrides, Crystal growth, High pressure, Optical properties
Origin
Hal imported