SCHOENHERR, Peggy; SHAPOVALOV, Konstantin; SCHAAB, Jakob; YAN, Zewu; BOURRET, Edith; HENTSCHEL, Mario; STENGEL, Massimiliano; FIEBIG, Manfred; CANO, Andres; MEIER, Dennis

doi:10.1021/acs.nanolett.8b04608

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Licencia de uso del documento

SCHOENHERR, Peggy
Department of Materials [ETH Zürich] [D-MATL]

SHAPOVALOV, Konstantin
Institut de Ciència de Materials de Barcelona [ICMAB]
Institut de Chimie de la Matière Condensée de Bordeaux [ICMCB]

SCHAAB, Jakob
Department of Materials [ETH Zürich] [D-MATL]

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Article de revue

Este ítem está publicado en

Nano Letters. 2019-02-12, vol. 19, n° 3, p. 1659–1664

American Chemical Society

Resumen en inglés

Low-temperature electrostatic force microscopy (EFM) is used to probe unconventional domain walls in the improper ferroelectric semiconductor Er0.99Ca0.01MnO3 down to cryogenic temperatures. The low-temperature EFM maps reveal pronounced electric far fields generated by partially uncompensated domain-wall bound charges. Positively and negatively charged walls display qualitatively different fields as a function of temperature, which we explain based on different screening mechanisms and the corresponding relaxation time of the mobile carriers. Our results demonstrate domain walls in improper ferroelectrics as a unique example of natural interfaces that are stable against the emergence of electrically uncompensated bound charges. The outstanding robustness of improper ferroelectric domain walls in conjunction with their electronic versatility brings us an important step closer to the development of durable and ultrasmall electronic components for next-generation nanotechnology.< Leer menos

DOI

http://dx.doi.org/10.1021/acs.nanolett.8b04608

Proyecto ANR

Initiative d'excellence de l'Université de Bordeaux - ANR-10-IDEX-0003

Orígen

Importado de Hal

Centros de investigación

Institut de Chimie de la Matière Condensée de Bordeaux (ICMCB) - UMR 5026