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Observation of uncompensated bound charges at improper ferroelectric domain walls

hal.structure.identifierDepartment of Materials [ETH Zürich] [D-MATL]
dc.contributor.authorSCHOENHERR, Peggy
hal.structure.identifierInstitut de Ciència de Materials de Barcelona [ICMAB]
hal.structure.identifierInstitut de Chimie de la Matière Condensée de Bordeaux [ICMCB]
dc.contributor.authorSHAPOVALOV, Konstantin
hal.structure.identifierDepartment of Materials [ETH Zürich] [D-MATL]
dc.contributor.authorSCHAAB, Jakob
hal.structure.identifierDepartment of Physics = Departement Physik [ETH Zürich] [D-PHYS]
dc.contributor.authorYAN, Zewu
hal.structure.identifierMaterials Science Division [LBNL Berkeley]
dc.contributor.authorBOURRET, Edith
hal.structure.identifierUniversity of Stuttgart = Universität Stuttgart
dc.contributor.authorHENTSCHEL, Mario
hal.structure.identifierInstitut de Ciència de Materials de Barcelona [ICMAB]
dc.contributor.authorSTENGEL, Massimiliano
hal.structure.identifierDepartment of Materials [ETH Zürich] [D-MATL]
dc.contributor.authorFIEBIG, Manfred
hal.structure.identifierThéorie de la Matière Condensée [NEEL - TMC]
hal.structure.identifierInstitut Néel [NEEL]
dc.contributor.authorCANO, Andres
hal.structure.identifierNorwegian University of Science and Technology [Trondheim] [NTNU]
hal.structure.identifierDepartment of Materials [ETH Zürich] [D-MATL]
dc.contributor.authorMEIER, Dennis
dc.date.issued2019-02-12
dc.identifier.issn1530-6984
dc.description.abstractEnLow-temperature electrostatic force microscopy (EFM) is used to probe unconventional domain walls in the improper ferroelectric semiconductor Er0.99Ca0.01MnO3 down to cryogenic temperatures. The low-temperature EFM maps reveal pronounced electric far fields generated by partially uncompensated domain-wall bound charges. Positively and negatively charged walls display qualitatively different fields as a function of temperature, which we explain based on different screening mechanisms and the corresponding relaxation time of the mobile carriers. Our results demonstrate domain walls in improper ferroelectrics as a unique example of natural interfaces that are stable against the emergence of electrically uncompensated bound charges. The outstanding robustness of improper ferroelectric domain walls in conjunction with their electronic versatility brings us an important step closer to the development of durable and ultrasmall electronic components for next-generation nanotechnology.
dc.description.sponsorshipInitiative d'excellence de l'Université de Bordeaux - ANR-10-IDEX-0003
dc.language.isoen
dc.publisherAmerican Chemical Society
dc.title.enObservation of uncompensated bound charges at improper ferroelectric domain walls
dc.typeArticle de revue
dc.identifier.doi10.1021/acs.nanolett.8b04608
dc.subject.halPhysique [physics]
dc.subject.halPhysique [physics]/Matière Condensée [cond-mat]
dc.subject.halPhysique [physics]/Matière Condensée [cond-mat]/Science des matériaux [cond-mat.mtrl-sci]
dc.subject.halChimie/Matériaux
bordeaux.journalNano Letters
bordeaux.page1659–1664
bordeaux.volume19
bordeaux.issue3
bordeaux.peerReviewedoui
hal.identifierhal-02018493
hal.version1
hal.popularnon
hal.audienceInternationale
hal.origin.linkhttps://hal.archives-ouvertes.fr//hal-02018493v1
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