RAHAB, H.; OUADJAOUT, D.; MANSERI, A.; CHAMINADE, Jean-Pierre; VIRAPHONG, Oudomsack

doi:10.1016/j.jcrysgro.2006.12.059

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RAHAB, H.
Unité de Développement de la Technologie du Silicium [UDTS]

OUADJAOUT, D.
Unité de Développement de la Technologie du Silicium [UDTS]

MANSERI, A.
Unité de Développement de la Technologie du Silicium [UDTS]

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Journal of Crystal Growth. 2007, vol. 303, n° 2, p. 629-631

Elsevier

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In this paper, we present the results of our attempt to grow NaBiW2O8 (NBW) and Na5B2P3O13 (NBP) crystals by the heat exchanger method (HEM). This method is slightly different from the Bridgman technique: the crucible is kept fixed in the setup and the center of the crucible bottom is cooled by a variable helium gas flow. It allows very good control of the growth rate and minimizes parasitic crystallization at the crucible walls. First experiments for growing these two materials by the HEM technique have shown very promising results with single-crystal sizes of few cubic centimetres..< Leer menos

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Growth from melt

HEM

Phosphates

Tungstates

Non-linear optics materials

Scintillator materials

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Growth by the heat exchanger method of NaBiW2O8 and Na5B2P3O13 crystals

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