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hal.structure.identifierUnité de Développement de la Technologie du Silicium [UDTS]
dc.contributor.authorRAHAB, H.
hal.structure.identifierUnité de Développement de la Technologie du Silicium [UDTS]
dc.contributor.authorOUADJAOUT, D.
hal.structure.identifierUnité de Développement de la Technologie du Silicium [UDTS]
dc.contributor.authorMANSERI, A.
hal.structure.identifierInstitut de Chimie de la Matière Condensée de Bordeaux [ICMCB]
dc.contributor.authorCHAMINADE, Jean-Pierre
hal.structure.identifierInstitut de Chimie de la Matière Condensée de Bordeaux [ICMCB]
dc.contributor.authorVIRAPHONG, Oudomsack
dc.date.issued2007
dc.identifier.issn0022-0248
dc.description.abstractEnIn this paper, we present the results of our attempt to grow NaBiW2O8 (NBW) and Na5B2P3O13 (NBP) crystals by the heat exchanger method (HEM). This method is slightly different from the Bridgman technique: the crucible is kept fixed in the setup and the center of the crucible bottom is cooled by a variable helium gas flow. It allows very good control of the growth rate and minimizes parasitic crystallization at the crucible walls. First experiments for growing these two materials by the HEM technique have shown very promising results with single-crystal sizes of few cubic centimetres..
dc.language.isoen
dc.publisherElsevier
dc.subject.enGrowth from melt
dc.subject.enHEM
dc.subject.enPhosphates
dc.subject.enTungstates
dc.subject.enNon-linear optics materials
dc.subject.enScintillator materials
dc.title.enGrowth by the heat exchanger method of NaBiW2O8 and Na5B2P3O13 crystals
dc.typeArticle de revue
dc.identifier.doi10.1016/j.jcrysgro.2006.12.059
dc.subject.halChimie/Matériaux
dc.subject.halChimie/Chimie inorganique
bordeaux.journalJournal of Crystal Growth
bordeaux.page629-631
bordeaux.volume303
bordeaux.issue2
bordeaux.peerReviewedoui
hal.identifierhal-00144341
hal.version1
hal.popularnon
hal.audienceInternationale
hal.origin.linkhttps://hal.archives-ouvertes.fr//hal-00144341v1
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