Linking hopping conductivity to giant dielectric permittivity in oxides
ARTEMENKO, Alla
Institut de Chimie de la Matière Condensée de Bordeaux [ICMCB]
Institute for Problems of Material Science
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Institut de Chimie de la Matière Condensée de Bordeaux [ICMCB]
Institute for Problems of Material Science
ARTEMENKO, Alla
Institut de Chimie de la Matière Condensée de Bordeaux [ICMCB]
Institute for Problems of Material Science
< Reduce
Institut de Chimie de la Matière Condensée de Bordeaux [ICMCB]
Institute for Problems of Material Science
Language
en
Article de revue
This item was published in
Applied Physics Letters. 2010, vol. 93, n° 13, p. 132901 (3 p.)
American Institute of Physics
English Abstract
With the promise of electronics breakthrough, giant dielectric permittivity materials are under deep investigations. In most of the oxides where such behavior was observed, charged defects at interfaces are quoted for such ...Read more >
With the promise of electronics breakthrough, giant dielectric permittivity materials are under deep investigations. In most of the oxides where such behavior was observed, charged defects at interfaces are quoted for such giant behavior to occur but the underlying conduction and localization mechanisms are not well known. Comparing macroscopic dielectric relaxation to microscopic dynamics of charged defects resulting from electron paramagnetic resonance investigations we identify the actual charged defects in the case of BaTiO3 ceramics and composites. This link between the thermal activation at these two complementary scales may be extended to the numerous oxides were giant dielectric behavior was found.Read less <
English Keywords
Hopping conduction
Paramagnetic resonance
Permittivity
Silicon compounds
Matériaux
Barium compounds
Dielectric relaxation
Ferroelectric ceramics
Origin
Hal imported