FAURE, Cyril; CLATOT, Johnny; TEULÉ-GAY, Lionel; CAMPET, Guy; LABRUGÈRE, Christine; NISTOR, Magda; ROUGIER, Aline

doi:10.1016/j.tsf.2012.10.006

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FAURE, Cyril
Institut de Chimie de la Matière Condensée de Bordeaux [ICMCB]

CLATOT, Johnny
Laboratoire réactivité et chimie des solides - UMR CNRS 7314 UPJV [LRCS]

TEULÉ-GAY, Lionel
Institut de Chimie de la Matière Condensée de Bordeaux [ICMCB]

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Thin Solid Films. 2012, vol. 524, p. 151-156

Elsevier

Résumé en anglais

Silicon doped Zinc Oxide thin films, so-called SZO, were deposited at room temperature on glass and plastic substrates by co-sputtering of ZnO and SiO2 targets. The influence of the SiO2 target power supply (from 30 to 75 W) on the SZO thin film composition and crystallinity is discussed. Si/Zn atomic ratio, determined by X-ray microprobe, increases from 1.2 to 8.2 at.%. For Si/Zn ratio equal and lower than 3.9%, SZO (S3.9ZO) thin films exhibit the Wurzite structure with the (0 0 2) preferred orientation. Larger Si content leads to a decrease in crystallinity. With Si addition, the resistivity decreases down to 3.5 × 10− 3 Ω*cm for SZO thin film containing 3.9 at.% of Si prior to an increase. The mean transmittance of S3.9ZO thin film on glass substrate approaches 80% (it is about 90% for the film itself) in the visible range (from 400 to 750 nm). Co-sputtered SZO thin films are suitable candidates for large area transparent conductive oxides.< Réduire

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Transparent conductive oxides

Zinc oxide

Thin films

Silicon

Doping

Co-sputtering

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Co-sputtered ZnO:Si thin films as transparent conductive oxides

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