Co-sputtered ZnO:Si thin films as transparent conductive oxides
| hal.structure.identifier | Institut de Chimie de la Matière Condensée de Bordeaux [ICMCB] | |
| dc.contributor.author | FAURE, Cyril | |
| hal.structure.identifier | Laboratoire réactivité et chimie des solides - UMR CNRS 7314 UPJV [LRCS] | |
| dc.contributor.author | CLATOT, Johnny | |
| hal.structure.identifier | Institut de Chimie de la Matière Condensée de Bordeaux [ICMCB] | |
| dc.contributor.author | TEULÉ-GAY, Lionel | |
| hal.structure.identifier | Institut de Chimie de la Matière Condensée de Bordeaux [ICMCB] | |
| dc.contributor.author | CAMPET, Guy | |
| hal.structure.identifier | Institut de Chimie de la Matière Condensée de Bordeaux [ICMCB] | |
| dc.contributor.author | LABRUGÈRE, Christine | |
| hal.structure.identifier | National Institute for Lasers, Plasmas and Radiation Physics [NILPRP] | |
| dc.contributor.author | NISTOR, Magda | |
| hal.structure.identifier | Institut de Chimie de la Matière Condensée de Bordeaux [ICMCB] | |
| dc.contributor.author | ROUGIER, Aline | |
| dc.date.issued | 2012 | |
| dc.identifier.issn | 0040-6090 | |
| dc.description.abstractEn | Silicon doped Zinc Oxide thin films, so-called SZO, were deposited at room temperature on glass and plastic substrates by co-sputtering of ZnO and SiO2 targets. The influence of the SiO2 target power supply (from 30 to 75 W) on the SZO thin film composition and crystallinity is discussed. Si/Zn atomic ratio, determined by X-ray microprobe, increases from 1.2 to 8.2 at.%. For Si/Zn ratio equal and lower than 3.9%, SZO (S3.9ZO) thin films exhibit the Wurzite structure with the (0 0 2) preferred orientation. Larger Si content leads to a decrease in crystallinity. With Si addition, the resistivity decreases down to 3.5 × 10− 3 Ω*cm for SZO thin film containing 3.9 at.% of Si prior to an increase. The mean transmittance of S3.9ZO thin film on glass substrate approaches 80% (it is about 90% for the film itself) in the visible range (from 400 to 750 nm). Co-sputtered SZO thin films are suitable candidates for large area transparent conductive oxides. | |
| dc.language.iso | en | |
| dc.publisher | Elsevier | |
| dc.subject.en | Transparent conductive oxides | |
| dc.subject.en | Zinc oxide | |
| dc.subject.en | Thin films | |
| dc.subject.en | Silicon | |
| dc.subject.en | Doping | |
| dc.subject.en | Co-sputtering | |
| dc.title.en | Co-sputtered ZnO:Si thin films as transparent conductive oxides | |
| dc.type | Article de revue | |
| dc.identifier.doi | 10.1016/j.tsf.2012.10.006 | |
| dc.subject.hal | Chimie/Matériaux | |
| bordeaux.journal | Thin Solid Films | |
| bordeaux.page | 151-156 | |
| bordeaux.volume | 524 | |
| bordeaux.peerReviewed | oui | |
| hal.identifier | hal-00762293 | |
| hal.version | 1 | |
| hal.popular | non | |
| hal.audience | Internationale | |
| hal.origin.link | https://hal.archives-ouvertes.fr//hal-00762293v1 | |
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