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Temperature dependence of luminescence for different surface flaws in high purity silica glass

hal.structure.identifierCentre d'études scientifiques et techniques d'Aquitaine (CESTA-CEA) [CESTA]
hal.structure.identifierInstitut de Chimie de la Matière Condensée de Bordeaux [ICMCB]
dc.contributor.authorFOURNIER, Jessica
hal.structure.identifierCentre d'études scientifiques et techniques d'Aquitaine (CESTA-CEA) [CESTA]
dc.contributor.authorGRUA, Pierre
hal.structure.identifierCentre d'études scientifiques et techniques d'Aquitaine (CESTA-CEA) [CESTA]
dc.contributor.authorNÉAUPORT, Jérôme
hal.structure.identifierInstitut de Chimie de la Matière Condensée de Bordeaux [ICMCB]
dc.contributor.authorFARGIN, Evelyne
hal.structure.identifierInstitut de Chimie de la Matière Condensée de Bordeaux [ICMCB]
dc.contributor.authorJUBERA, Veronique
hal.structure.identifierInstitut des Sciences Moléculaires [ISM]
dc.contributor.authorTALAGA, David
hal.structure.identifierInstitut des Sciences Moléculaires [ISM]
dc.contributor.authorDEL GUERZO, André
hal.structure.identifierInstitut des Sciences Moléculaires [ISM]
dc.contributor.authorRAFFY, Guillaume
hal.structure.identifierLaboratoire des Composites Thermostructuraux [LCTS]
dc.contributor.authorJOUANNIGOT, Stéphane
dc.date.issued2013
dc.identifier.issn2159-3930
dc.description.abstractEnIn situ temperature dependence of the Photoluminescence under 325nm irradiation is used to investigate defect populations existing in different surface flaws in high purity fused silica. Five photoluminescence bands peaking at 1.9, 2.1, 2.3, 2.63 and 3.11 eV have been detected in the spectral area ranging from 1.6 up to 3.6 eV. The Gaussian deconvolution of spectra allows dividing the five luminescence bands in two categories. The former corresponds to bands showing a significant intensity enhancement while temperature decreases; the latter corresponds to bands remaining insensitive to the temperature evolution. Such a behavior brings new information on defects involved in laser damage mechanism at 351 nm in nanosecond regime.
dc.language.isoen
dc.publisherOSA pub
dc.subject.enFluorescence microscopy
dc.subject.enLaser damage
dc.subject.enGlass
dc.subject.enOptics
dc.title.enTemperature dependence of luminescence for different surface flaws in high purity silica glass
dc.typeArticle de revue
dc.identifier.doi10.1364/OME.3.000001
dc.subject.halChimie/Matériaux
bordeaux.journalOptical Materials Express
bordeaux.page1-10
bordeaux.volume3
bordeaux.issue1
bordeaux.peerReviewedoui
hal.identifierhal-00806313
hal.version1
hal.popularnon
hal.audienceInternationale
hal.origin.linkhttps://hal.archives-ouvertes.fr//hal-00806313v1
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