HALLIL, Hamida; CAI, Weifan; ZHANG, Kang; YU, Peng; LIU, Sheng; XU, Ran; ZHU, Chao; XIONG, Qihua; LIU, Zheng; ZHANG, Qing

doi:10.1002/aelm.202101131

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HALLIL, Hamida
Laboratoire de l'intégration, du matériau au système [IMS]

CAI, Weifan

ZHANG, Kang

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Advanced Electronic Materials. 2022-02p. 2101131

Résumé en anglais

Distinct from conventional 2H-MoS2, recently synthesized 3R-MoS2 exhibits a noncentrosymmetric atomic structure of the trigonal “building blocks” and, thus, remarkable piezoelectric characteristics of ultrathin 3R-MoS2 flakes are predicated theoretically. This paper reveals, for the first time, very high piezoelectricity in 3R-MoS2 flakes experimentally. Through applying mechanical stress to a 48 nm 3R-MoS2 flake, a high output power density of 65 mW m-2 is obtained and is at least one order larger than those from the corresponding monolayer MoS2 flake. With out-of-plane lateral piezoresponse force microscopy technique, the two piezoelectric coefficients d33 and d13 are analyzed to be ≈0.9 and ≈1.6 pm V-1, respectively. These piezoelectric coefficients are not apparently dependent on the flake thickness. The findings suggest that 3R-MoS2 is of excellent piezoelectric properties and it can be an excellent material for novel piezoelectric devices.< Réduire

Mots clés en anglais

piezoelectric coefficients

piezoelectric devices

piezoelectricity of 3R-MoS 2 flake

piezoresponse force microscopy (PFM)

TMDs materials electrical properties

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Strong Piezoelectricity in 3R‐MoS 2 Flakes

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