Strong Piezoelectricity in 3R‐MoS 2 Flakes
| dc.rights.license | open | en_US |
| hal.structure.identifier | Laboratoire de l'intégration, du matériau au système [IMS] | |
| dc.contributor.author | HALLIL, Hamida | |
| dc.contributor.author | CAI, Weifan | |
| dc.contributor.author | ZHANG, Kang | |
| dc.contributor.author | YU, Peng | |
| dc.contributor.author | LIU, Sheng | |
| dc.contributor.author | XU, Ran | |
| dc.contributor.author | ZHU, Chao | |
| dc.contributor.author | XIONG, Qihua | |
| dc.contributor.author | LIU, Zheng | |
| dc.contributor.author | ZHANG, Qing | |
| dc.date.accessioned | 2022-07-13T09:02:06Z | |
| dc.date.available | 2022-07-13T09:02:06Z | |
| dc.date.issued | 2022-02 | |
| dc.identifier.issn | 2199-160X | en_US |
| dc.identifier.other | https://onlinelibrary.wiley.com/action/downloadSupplement?doi=10.1002%2Faelm.202101131&file=aelm202101131-sup-0001-SuppMat.pdf | en_US |
| dc.identifier.uri | oai:crossref.org:10.1002/aelm.202101131 | |
| dc.identifier.uri | https://oskar-bordeaux.fr/handle/20.500.12278/140468 | |
| dc.description.abstractEn | Distinct from conventional 2H-MoS2, recently synthesized 3R-MoS2 exhibits a noncentrosymmetric atomic structure of the trigonal “building blocks” and, thus, remarkable piezoelectric characteristics of ultrathin 3R-MoS2 flakes are predicated theoretically. This paper reveals, for the first time, very high piezoelectricity in 3R-MoS2 flakes experimentally. Through applying mechanical stress to a 48 nm 3R-MoS2 flake, a high output power density of 65 mW m-2 is obtained and is at least one order larger than those from the corresponding monolayer MoS2 flake. With out-of-plane lateral piezoresponse force microscopy technique, the two piezoelectric coefficients d33 and d13 are analyzed to be ≈0.9 and ≈1.6 pm V-1, respectively. These piezoelectric coefficients are not apparently dependent on the flake thickness. The findings suggest that 3R-MoS2 is of excellent piezoelectric properties and it can be an excellent material for novel piezoelectric devices. | |
| dc.language.iso | EN | en_US |
| dc.source | crossref | |
| dc.subject.en | piezoelectric coefficients | |
| dc.subject.en | piezoelectric devices | |
| dc.subject.en | piezoelectricity of 3R-MoS 2 flake | |
| dc.subject.en | piezoresponse force microscopy (PFM) | |
| dc.subject.en | TMDs materials electrical properties | |
| dc.title.en | Strong Piezoelectricity in 3R‐MoS 2 Flakes | |
| dc.type | Article de revue | en_US |
| dc.identifier.doi | 10.1002/aelm.202101131 | en_US |
| dc.subject.hal | Sciences de l'ingénieur [physics]/Micro et nanotechnologies/Microélectronique | en_US |
| bordeaux.journal | Advanced Electronic Materials | en_US |
| bordeaux.page | 2101131 | en_US |
| bordeaux.hal.laboratories | Laboratoire d’Intégration du Matériau au Système (IMS) - UMR 5218 | en_US |
| bordeaux.institution | Université de Bordeaux | en_US |
| bordeaux.institution | Bordeaux INP | en_US |
| bordeaux.institution | CNRS | en_US |
| bordeaux.peerReviewed | oui | en_US |
| bordeaux.inpress | non | en_US |
| bordeaux.import.source | dissemin | |
| hal.identifier | hal-03722166 | |
| hal.version | 1 | |
| hal.date.transferred | 2022-07-13T09:02:09Z | |
| hal.export | true | |
| workflow.import.source | dissemin | |
| dc.rights.cc | Pas de Licence CC | en_US |
| bordeaux.COinS | ctx_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.jtitle=Advanced%20Electronic%20Materials&rft.date=2022-02&rft.spage=2101131&rft.epage=2101131&rft.eissn=2199-160X&rft.issn=2199-160X&rft.au=HALLIL,%20Hamida&CAI,%20Weifan&ZHANG,%20Kang&YU,%20Peng&LIU,%20Sheng&rft.genre=article |
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