New insight on the frequency dependence of TDDB in high-k/metal gate stacks
GHIBAUDO, Gérard
Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation [IMEP-LAHC]
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Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation [IMEP-LAHC]
Idioma
en
Communication dans un congrès
Este ítem está publicado en
IRW 2013, 2013-10-13, South Lake Tahoe, CA. 2013-10
Resumen en inglés
This paper deals with the oxide breakdown (BD) under positive gate voltage in nMOS Devices. First, bulk current is shown to be more sensitive than gate current for breakdown event detection. Then, since test interruption ...Leer más >
This paper deals with the oxide breakdown (BD) under positive gate voltage in nMOS Devices. First, bulk current is shown to be more sensitive than gate current for breakdown event detection. Then, since test interruption is shown to induce possible error in TBD evaluation, a methodology with an on the fly detection of breakdown is proposed for both DC and AC stresses. Finally, a discussion on the impact of charge trapping/detrapping is opened.< Leer menos
Palabras clave en inglés
high-k dielectric thin films
semiconductor device reliability
TDDB
trapping
MOSFET
semiconductor device breakdown
Orígen
Importado de HalCentros de investigación