New insight on the frequency dependence of TDDB in high-k/metal gate stacks
GHIBAUDO, Gérard
Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation [IMEP-LAHC]
< Réduire
Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation [IMEP-LAHC]
Langue
en
Communication dans un congrès
Ce document a été publié dans
IRW 2013, 2013-10-13, South Lake Tahoe, CA. 2013-10
Résumé en anglais
This paper deals with the oxide breakdown (BD) under positive gate voltage in nMOS Devices. First, bulk current is shown to be more sensitive than gate current for breakdown event detection. Then, since test interruption ...Lire la suite >
This paper deals with the oxide breakdown (BD) under positive gate voltage in nMOS Devices. First, bulk current is shown to be more sensitive than gate current for breakdown event detection. Then, since test interruption is shown to induce possible error in TBD evaluation, a methodology with an on the fly detection of breakdown is proposed for both DC and AC stresses. Finally, a discussion on the impact of charge trapping/detrapping is opened.< Réduire
Mots clés en anglais
high-k dielectric thin films
semiconductor device reliability
TDDB
trapping
MOSFET
semiconductor device breakdown
Origine
Importé de halUnités de recherche