FRANCHINA VERGEL, Nathali; POST, L. Christiaan; FLEURY, Guillaume; PATRIARCHE, Gilles; XU, Tao; DESPLANQUE, Ludovic; VANMAEKELBERGH, Daniel; DELERUE, Christophe; GRANDIDIER, Bruno; SCIACCA, Davide; BERTHE, Maxime; VAURETTE, François; LAMBERT, Yannick; YAREKHA, Dmitri; TROADEC, David; COINON, Christophe; WALLART, Xavier

doi:10.1021/acs.nanolett.0c04268

FRANCHINA VERGEL, Nathali
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]

POST, L. Christiaan
Debye Institute for Nanomaterials Science

FLEURY, Guillaume

Laboratoire de Chimie des Polymères Organiques [LCPO]
Team 4 LCPO : Polymer Materials for Electronic, Energy, Information and Communication Technologies

Langue

Article de revue

Ce document a été publié dans

Nano Letters. 2020-12-18, vol. 21, p. 680

Résumé en anglais

Electron states in semiconductor materials can be modified by quantum confinement. Adding to semiconductor heterostructures the concept of lateral geometry offers the possibility to further tailor the electronic band structure with the creation of unique flat bands. Using block copolymer lithography, we describe the design, fabrication, and characterization of multiorbital bands in a honeycomb In0.53Ga0.47As/InP heterostructure quantum well with a lattice constant of 21 nm. Thanks to an optimized surface quality, scanning tunnelling spectroscopy reveals the existence of a strong resonance localized between the lattice sites, signature of a p-orbital flat band. Together with theoretical computations, the impact of the nanopatterning imperfections on the band structure is examined. We show that the flat band is protected against the lateral and vertical disorder, making this industry-standard system particularly attractive for the study of exotic phases of matter.< Réduire

Mots clés en anglais

Two-dimensional lattice

III−V semiconductor

quantum well

band engineering

flat band

disorder

block copolymer lithography

scanning tunneling spectroscopy

tight binding calculations

URI

https://oskar-bordeaux.fr/handle/20.500.12278/26071

DOI

http://dx.doi.org/10.1021/acs.nanolett.0c04268

Projet Européen

ERC Advanced Grant 692691-“FIRST STEP”

Project ANR

Super-réseau d'antipoints de Dirac pour les électrons dans les semiconducteurs III-V
/
Centre expérimental pour l'étude des propriétés des nanodispositifs dans un large spectre du DC au moyen Infra-rouge. - ANR-11-EQPX-0015

Unités de recherche

Laboratoire de Chimie des Polymères Organiques (LCPO) - UMR 5629

Voir/Ouvrir

Métadonnées

Partager cette publication !

Licence d’utilisation du document

Engineering a Robust Flat Band in III–V Semiconductor Heterostructures