Finite element method and equivalent circuit analysis of tunable FBAR resonators
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EN
Communication dans un congrès
Este ítem está publicado en
2022 29th IEEE International Conference on Electronics, Circuits and Systems (ICECS), 2022 29th IEEE International Conference on Electronics, Circuits and Systems (ICECS), 2022-10-24, Glasgow. 2022-10p. 1-4
Resumen en inglés
In recent decades, the rapid development of wireless communication technologies has led to the fast development of other fields, and radio frequency (RF) front-end devices become of particular importance for the fifth-generation ...Leer más >
In recent decades, the rapid development of wireless communication technologies has led to the fast development of other fields, and radio frequency (RF) front-end devices become of particular importance for the fifth-generation (5G) telecommunication system. In this context, the film bulk acoustic resonator (FBAR), with an operating frequency up to 10 GHz and miniaturized size, is therefore becoming in great demand to satisfy the emerging research and industry needs. In this work, the design of a tunable FBAR is performed and analysed by finite element method (FEM) at microwave frequency range. The FBAR tunability is realised by applying different mechanical loads and its equivalent circuit was studied by using a Butterworth-Van Dyke (BVD) model, this work gives a deeper understanding and analysis on the physical origin of FBAR's tunability and can therefore give some strategy and methodology support for the design of such devices.< Leer menos
Palabras clave
Radio frequency
Wireless communication
Analytical mode
Resonant frequency
Finite element analysis
Film bulk acoustic resonators
Integrated circuit modeling
RF front-end devices
Equivalent electrical circuit
Solidly Mounted Resonator (SMR)
Tunable
FBAR
Piezoelectric transducers
Centros de investigación