LHOMEL, Antoine; RIVET, François; DELTIMPLE, Nathalie

doi:10.29292/jics.v18i3.795

LHOMEL, Antoine
Laboratoire de l'intégration, du matériau au système [IMS]

RIVET, François
Laboratoire de l'intégration, du matériau au système [IMS]

DELTIMPLE, Nathalie

Laboratoire de l'intégration, du matériau au système [IMS]

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Article de revue

Ce document a été publié dans

Journal of Integrated Circuits and Systems,. 2023-12-28, vol. 18, n° 3, p. 1-10

Résumé en anglais

To achieve ultra-high-speed wireless communications, millimeter-wave bands have emerged as bands of interest for these new applications. However, a technological breakthrough linked to power amplifiers has appeared. Indeed, working near the maximum oscillation frequency of the transistor leads to low intrinsic gain and poor efficiency for these devices. This paper presents an overview of sub-terahertz CMOS power amplifiers with a focus on gain enhancement techniques. The paper will also feature state-of-the-art D-Band CMOS power amplifier architectures. The goal is to present how the gain enhancement techniques are used in a complete architecture. Based on the three techniques and the state-of-the-art presented in the paper, a focus on three architectures is proposed. The aim is to highlight the benefits of each method in the design. The final part summarizes the paper and opens up future perspectives and trends identified through the paper.< Réduire

Mots clés

D-Band

CMOS Power Amplifier (PA)

Sub-terahertz (sub-THz)

Unilateral power gain (U)

Gain-boosting

URI

https://oskar-bordeaux.fr/handle/20.500.12278/187874

DOI

http://dx.doi.org/10.29292/jics.v18i3.795

Unités de recherche

IMS : Laboratoire de l'Intégration du Matériau au Système - UMR 5218

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D-Band CMOS Power Amplifiers: Challenges, State-of-the-Art, Technological Limitations and Trends

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