Effect of the doping element on the structure and UV–visible properties in the system Bi4V1.7(Si,Me)0.3O11-δ (Me = Si, P, Cu, and Co)
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en
Article de revue
Ce document a été publié dans
Ionics. 2023, vol. 29, n° 11, p. 4923–4932
Springer Verlag
Résumé en anglais
While BIMEVOX systems have attracted the attention of researchers for their electrical conductivity by O2− oxide ions at relatively low temperatures, there is only a limited number of works concerning their local structure. ...Lire la suite >
While BIMEVOX systems have attracted the attention of researchers for their electrical conductivity by O2− oxide ions at relatively low temperatures, there is only a limited number of works concerning their local structure. In this work, the Bi4V1.7(Si.Me)0.3O11-δ (Me = Si, P, Cu, and Co) system is studied using X-ray powder diffraction (XRD), Raman spectroscopy, IR spectroscopy, SEM–EDX, UV–visible spectrophotometry, and differential scanning calorimetry (DSC). The three main polymorphs α, β, and γ are obtained at room temperature. In the case of the Bi4Si0.15P0.15V1.70O11-δ compound, two successive structural transitions were observed, while only one structural transition was observed for the Bi4Si0.30V1.70O11-δ compound. The UV–vis diffuse reflectance spectroscopy (DRS) indicates that the double-doped Bi4V1.7(Si.Me)0.3O11-δ compounds present a band gap energy in the range 1.76 ≤ Eg ≤ 2.36 eV and Bi4Si0.15Co0.15V1.70O11-δ presents the narrowest band gap.< Réduire
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