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hal.structure.identifierLaboratoire des Sciences des Matériaux et Optimisation des Procédés [SCIMATOP]
dc.contributor.authorAGNAOU, Abdelmajid
hal.structure.identifierLaboratoire des Sciences des Matériaux et Optimisation des Procédés [SCIMATOP]
dc.contributor.authorMHAIRA, Wafaa
hal.structure.identifierLaboratoire des Sciences des Matériaux et Optimisation des Procédés [SCIMATOP]
dc.contributor.authorESSALIM, Rachida
hal.structure.identifierLaboratoire des Sciences des Matériaux et Optimisation des Procédés [SCIMATOP]
dc.contributor.authorALGA, Maati
hal.structure.identifierLaboratoire des Sciences des Matériaux et Optimisation des Procédés [SCIMATOP]
dc.contributor.authorZAMAMA, Mohamed
hal.structure.identifierInstitut de Chimie de la Matière Condensée de Bordeaux [ICMCB]
dc.contributor.authorMAUVY, Fabrice
hal.structure.identifierLaboratoire des Sciences des Matériaux et Optimisation des Procédés [SCIMATOP]
dc.contributor.authorAMMAR, Abdelaziz
dc.date.issued2023
dc.identifier.issn0947-7047
dc.description.abstractEnWhile BIMEVOX systems have attracted the attention of researchers for their electrical conductivity by O2− oxide ions at relatively low temperatures, there is only a limited number of works concerning their local structure. In this work, the Bi4V1.7(Si.Me)0.3O11-δ (Me = Si, P, Cu, and Co) system is studied using X-ray powder diffraction (XRD), Raman spectroscopy, IR spectroscopy, SEM–EDX, UV–visible spectrophotometry, and differential scanning calorimetry (DSC). The three main polymorphs α, β, and γ are obtained at room temperature. In the case of the Bi4Si0.15P0.15V1.70O11-δ compound, two successive structural transitions were observed, while only one structural transition was observed for the Bi4Si0.30V1.70O11-δ compound. The UV–vis diffuse reflectance spectroscopy (DRS) indicates that the double-doped Bi4V1.7(Si.Me)0.3O11-δ compounds present a band gap energy in the range 1.76 ≤ Eg ≤ 2.36 eV and Bi4Si0.15Co0.15V1.70O11-δ presents the narrowest band gap.
dc.language.isoen
dc.publisherSpringer Verlag
dc.title.enEffect of the doping element on the structure and UV–visible properties in the system Bi4V1.7(Si,Me)0.3O11-δ (Me = Si, P, Cu, and Co)
dc.typeArticle de revue
dc.identifier.doi10.1007/s11581-023-05185-7
dc.subject.halChimie/Matériaux
bordeaux.journalIonics
bordeaux.page4923–4932
bordeaux.volume29
bordeaux.issue11
bordeaux.peerReviewedoui
hal.identifierhal-04205145
hal.version1
hal.popularnon
hal.audienceInternationale
hal.origin.linkhttps://hal.archives-ouvertes.fr//hal-04205145v1
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