Second Harmonic and Hyper-Rayleigh Generation of (111) silicon wafer
Langue
en
Communication dans un congrès
Ce document a été publié dans
2023 48th International Conference on Infrared, Millimeter and Terahertz Waves (IRMMW-THz 2023), 2023 48th International Conference on Infrared, Millimeter and Terahertz Waves (IRMMW-THz 2023), 2023-09-17, Montréal Québec. 2023
Institute of Electrical and Electronics Engineers (IEEE)
Résumé en anglais
Ultrafast time-resolved THz-induced SHG, also named hyper-Rayleigh generation, is performed at the surface of a (111) silicon wafer upon its excitation by a 50 fs IR optical pulse. The evolution of the SHG spectrum is ...Lire la suite >
Ultrafast time-resolved THz-induced SHG, also named hyper-Rayleigh generation, is performed at the surface of a (111) silicon wafer upon its excitation by a 50 fs IR optical pulse. The evolution of the SHG spectrum is recorded delaying in time the optical pulse with respect to the THz pulse. Upon excitation, we record a broad Stokes and anti-Stokes bands centered around the Si lattice phonon at ~610 cm -1 . The spectral evolution of the SHG signal versus the delay between optical and THz pulses makes it possible to evidence the interference between volume and surface contributions as well as the ultrafast evolution of the hyper-Rayleigh susceptibility upon hot carrier generation< Réduire
Mots clés en anglais
Spectroscopy at an interface
TeraHertz spectroscopy
Si 111
Origine
Importé de halUnités de recherche