CARRÉ, E; SPONZA, L; LUSSON, A; STENGER, I; GAUFRÈS, Étienne; LOISEAU, A; BARJON, J

doi:10.1088/2053-1583/abca81

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CARRÉ, E
LEM, UMR 104, CNRS-ONERA, Université Paris Saclay [Laboratoire d'étude des microstructures]
Groupe d'Etude de la Matière Condensée [GEMAC]
DMAS, ONERA, Université Paris Saclay [Châtillon]

SPONZA, L
LEM, UMR 104, CNRS-ONERA, Université Paris Saclay [Laboratoire d'étude des microstructures]
DMAS, ONERA, Université Paris Saclay [Châtillon]

LUSSON, A
Groupe d'Etude de la Matière Condensée [GEMAC]

Langue

Article de revue

Ce document a été publié dans

2D Materials. 2021-04, vol. 8, n° 2, p. 021001

IOP Publishing

Résumé en anglais

Atomic layers of Black Phosphorus (BP) present unique opto-electronic properties dominated by a direct tunable bandgap in a wide spectral range from visible to mid-infrared. In this work, we investigate the infrared photoluminescence of BP single crystals at very low temperature. Near-bandedge recombinations are observed at 2 K, including dominant excitonic transitions at 0.276 eV and a weaker one at 0.278 eV. The free-exciton binding energy is calculated with an anisotropic Wannier-Mott model and found equal to 9.1 meV. On the contrary, the PL intensity quenching of the 0.276 eV peak at high temperature is found with a much smaller activation energy, attributed to the localization of free excitons on a shallow impurity. This analysis leads us to attribute respectively the 0.276 eV and 0.278 eV PL lines to bound excitons and free excitons in BP. As a result, the value of bulk BP bandgap is refined to 0.287 eV at 2K.< Réduire

URI

https://oskar-bordeaux.fr/handle/20.500.12278/181537

DOI

http://dx.doi.org/10.1088/2053-1583/abca81

Projet Européen

Graphene Flagship Core Project 2
Graphene Flagship Core Project 3

Project ANR

Electroluminescence en spin polarisés dans les couches minces de phosphore noir - ANR-17-CE24-0023

Origine

Importé de hal

Unités de recherche

Laboratoire Photonique, Numérique et Nanosciences (LP2N) - UMR 5298