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dc.rights.licenseopenen_US
hal.structure.identifierInstitut de Mécanique et d'Ingénierie [I2M]
dc.contributor.authorKUSIAK, Andrzej
hal.structure.identifierInstitut de Mécanique et d'Ingénierie [I2M]
dc.contributor.authorCHASSAIN, Clément
hal.structure.identifierInstitut de Mécanique et d'Ingénierie [I2M]
dc.contributor.authorCANSECO, Alejandro Mateos
hal.structure.identifierInstitut de Mécanique et d'Ingénierie [I2M]
dc.contributor.authorGHOSH, Kanka
dc.contributor.authorCYRILLE, Marie-Claire
dc.contributor.authorSERRA, Anna Lisa
dc.contributor.authorNAVARRO, Gabriele
dc.contributor.authorBERNARD, Mathieu
dc.contributor.authorTRAN, Nguyet-Phuong
hal.structure.identifierInstitut de Mécanique et d'Ingénierie [I2M]
dc.contributor.authorBATTAGLIA, Jean-Luc
dc.date.accessioned2023-03-20T09:36:33Z
dc.date.available2023-03-20T09:36:33Z
dc.date.issued2022-01-08
dc.identifier.issn1862-6270en_US
dc.identifier.urihttps://oskar-bordeaux.fr/handle/20.500.12278/172368
dc.description.abstractEnThis article reports on the thermal characterization of Ge-rich Ge2Sb2Te5 films and Ge2Sb2Te5/Ge-rich Ge2Sb2Te5 multilayers designed for high-temperature applications in the field of phase-change memory. The thermal conductivities of such materials and the thermal boundary resistance with the Si3N4 dielectric material are characterized by two different photothermal techniques. The phase change in Ge-rich Ge2Sb2Te5 is found to occur at a temperature higher than that of the Ge2Sb2Te5 alloy. The Ge2Sb2Te5/Ge rich Ge2Sb2Te5 multilayer has been observed to feature two phase changes corresponding to Ge-rich Ge2Sb2Te5 and Ge2Sb2Te5. Finally, it is estimated that the thermal resistance of the interface separating Ge-rich Ge2Sb2Te5 and Ge2Sb2Te5 nanolayers constitutes the multilayer structure and its contribution has been realized to be significant in enhancing the thermal resistance of the multilayer structure.
dc.language.isoENen_US
dc.subject.enChalcogenide alloys
dc.subject.enMultilayers
dc.subject.enPhase-change materials
dc.subject.enPhotothermal radiometry
dc.subject.enThermal properties
dc.title.enTemperature-Dependent Thermal Conductivity and Interfacial Resistance of Ge-Rich Ge2Sb2Te5 Films and Multilayers
dc.typeArticle de revueen_US
dc.identifier.doi10.1002/pssr.202100507en_US
dc.subject.halSciences de l'ingénieur [physics]/Matériauxen_US
bordeaux.journalphysica status solidi (RRL) – Rapid Research Lettersen_US
bordeaux.volume16en_US
bordeaux.hal.laboratoriesInstitut de Mécanique et d’Ingénierie de Bordeaux (I2M) - UMR 5295en_US
bordeaux.issue4en_US
bordeaux.institutionUniversité de Bordeauxen_US
bordeaux.institutionBordeaux INPen_US
bordeaux.institutionCNRSen_US
bordeaux.institutionINRAEen_US
bordeaux.institutionArts et Métiersen_US
bordeaux.peerReviewedouien_US
bordeaux.inpressnonen_US
bordeaux.identifier.funderIDHorizon 2020en_US
hal.exportfalse
dc.rights.ccPas de Licence CCen_US
bordeaux.COinSctx_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.jtitle=physica%20status%20solidi%20(RRL)%20%E2%80%93%20Rapid%20Research%20Letters&rft.date=2022-01-08&rft.volume=16&rft.issue=4&rft.eissn=1862-6270&rft.issn=1862-6270&rft.au=KUSIAK,%20Andrzej&CHASSAIN,%20Cl%C3%A9ment&CANSECO,%20Alejandro%20Mateos&GHOSH,%20Kanka&CYRILLE,%20Marie-Claire&rft.genre=article


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