A 24-31GHz 28nm FD-SOI CMOS Balanced Power Amplifier Robust to 3:1 VSWR for 5G Application
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EN
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Ce document a été publié dans
2022 52nd European Microwave Conference (EuMC), 2022 52nd European Microwave Conference (EuMC), 2022-09-27, Milan. 2022-10-31p. 496-499
IEEE
Résumé en anglais
This paper presents a broadband balanced power amplifier (PA) for 5G mm-wave applications. Thanks to its balanced architecture, the PA exhibits a great robustness to active voltage standing wave ratio (VSWR). The design ...Lire la suite >
This paper presents a broadband balanced power amplifier (PA) for 5G mm-wave applications. Thanks to its balanced architecture, the PA exhibits a great robustness to active voltage standing wave ratio (VSWR). The design of the power cells is focused on high efficiency while maintaining high linearity. The PA exhibits 20.5dBm P sat with 39% peak power added efficiency (PAE) at 26GHz. In the n257 and n258 5G New Radio (NR) FR2 bands (24.25 - 29.50GHz), PAE rnax and PAE 6dBPBO of the PA remain above 30% and 14%, respectively. At 29 GHz, the PAE and Psat drop by only 3% and 0.8 dBm, respectively, between the optimal case 50 Ω and the worst case at 2:1 VSWR. The PA is implemented in a 28nm FD-SOI CMOS process and occupies 0.90mm2.< Réduire
Mots clés en anglais
Integrated circuit
Balanced power amplifier
VSWR
5G
CMOS
28nm FD-SOI
Ballast resistor
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