NIDHIN, K.; BALANETHIRAM, Suresh; NAIR, Deleep; D'ESPOSITO, Rosario; MOHAPATRA, Nihar; FREGONESE, Sebastien; ZIMMER, Thomas; CHAKRAVORTY, Anjan

doi:10.1109/TED.2022.3215715

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IEEE Transactions on Electron Devices. 2022-10-27, vol. 69, n° 12, p. 6541-6546

Résumé en anglais

A prior estimate of the impact of thermal resistance from the back-end-of-line (BEOL) metallization layers is crucial for an accurate circuit design and thermally aware device design. This paper presents a robust technique to extract the thermal resistance component originating from the BEOL metal layers in silicon germanium heterojunction bipolar transistors (SiGe HBTs). The proposed technique is first tested on data generated using analytical equations and later validated with 3D TCAD simulation. The results clearly show that the exact contribution of the BEOL to the overall thermal resistance is captured in the proposed approach. Finally, we verified the method using measured data obtained from fabricated SiGe HBT structures using Infineon B11HFC technology. The extracted parameters show reasonable accuracy and consistency across different emitter dimensions and BEOL configurations.< Réduire

Mots clés en anglais

SiGe HBTs

self heating

thermal resistance

back-end-of-line (BEOL)

parameter extraction

compact models

URI

https://oskar-bordeaux.fr/handle/20.500.12278/172104

DOI

http://dx.doi.org/10.1109/TED.2022.3215715

Unités de recherche

IMS : Laboratoire de l'Intégration du Matériau au Système - UMR 5218

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BEOL Thermal Resistance Extraction in SiGe HBTs

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