Resonant pairing of excitons in semiconductor heterostructures
ANDREEV, S. V.
National Research University of Information Technologies, Mechanics and Optics [St. Petersburg] [ITMO]
Laboratoire Ondes et Matière d'Aquitaine [LOMA]
Laboratoire de Physique Théorique et Modèles Statistiques [LPTMS]
National Research University of Information Technologies, Mechanics and Optics [St. Petersburg] [ITMO]
Laboratoire Ondes et Matière d'Aquitaine [LOMA]
Laboratoire de Physique Théorique et Modèles Statistiques [LPTMS]
ANDREEV, S. V.
National Research University of Information Technologies, Mechanics and Optics [St. Petersburg] [ITMO]
Laboratoire Ondes et Matière d'Aquitaine [LOMA]
Laboratoire de Physique Théorique et Modèles Statistiques [LPTMS]
< Réduire
National Research University of Information Technologies, Mechanics and Optics [St. Petersburg] [ITMO]
Laboratoire Ondes et Matière d'Aquitaine [LOMA]
Laboratoire de Physique Théorique et Modèles Statistiques [LPTMS]
Langue
en
Article de revue
Ce document a été publié dans
Physical Review B: Condensed Matter and Materials Physics (1998-2015). 2016-10-07, vol. 94, n° 14, p. 140501 (1-5)
American Physical Society
Résumé en anglais
We suggest indirect excitons in two-dimensional semiconductor heterostructures as a platform for the realization of a bosonic analog of the Bardeen-Cooper-Schrieffer superconductor. The quantum phase transition to a ...Lire la suite >
We suggest indirect excitons in two-dimensional semiconductor heterostructures as a platform for the realization of a bosonic analog of the Bardeen-Cooper-Schrieffer superconductor. The quantum phase transition to a biexcitonic gapped state can be controlled in situ by tuning the electric field applied to the structure in the growth direction. The proposed playground should allow one to go to strongly correlated and high-temperature regimes, unattainable with Feshbach resonant atomic gases.< Réduire
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