ANDREEV, S. V.

doi:10.1103/PhysRevB.94.165308

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ANDREEV, S. V.
National Research University of Information Technologies, Mechanics and Optics [St. Petersburg] [ITMO]
Laboratoire Ondes et Matière d'Aquitaine [LOMA]
Laboratoire de Physique Théorique et Modèles Statistiques [LPTMS]

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Physical Review B: Condensed Matter and Materials Physics (1998-2015). 2016-10-19, vol. 94, n° 16, p. 165308 (1-6)

American Physical Society

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We consider indirect excitons generated at the ring-shaped boundaries between electron-and hole-rich regions in semiconductor quantum wells (QW's). We show theoretically that the in-plane translational motion of the excitons is confined in the radial direction. The confinement potential results from the electrostatic interaction of the exciton dipole moment with the in-plane electric field induced at the boundary by the macroscopic charge separation. Our results directly apply to the external ring and the localized bright spots (LBS) observed in the photoluminescense (PL) pattern of indirect excitons.< Leer menos

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Formation of exciton rings and localized bright spots in coupled semiconductor quantum wells

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