High resolution resonant photoluminescence excitation of CdSe/ZnS nanocrystals at low temperatures
Langue
en
Article de revue
Ce document a été publié dans
Applied Physics Letters. 2006-06-01, vol. 88, p. 223110
American Institute of Physics
Résumé en anglais
We present a new technique to perform high resolution resonant photoluminescence excitation of CdSe/ZnS nanocrystals. The method takes advantage of the long photoluminescence decay times (~ 1 Μs) observed in this system ...Lire la suite >
We present a new technique to perform high resolution resonant photoluminescence excitation of CdSe/ZnS nanocrystals. The method takes advantage of the long photoluminescence decay times (~ 1 Μs) observed in this system at liquid helium temperatures. Resonant photoluminescence excitation can be performed using a tunable pulsed excitation and a time-gated detection. Spectral hole burning investigations on an ensemble of CdSe/ZnS nanocrystals lead to homogeneous linewidths of ~100 µeV for the band edge exciton state.< Réduire
Mots clés en anglais
single nano-object detection
CdSe/ZnS quantum dots
high resolution spectroscopy
spectral hole burning
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