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High performance HBV multipliers monolithically integrated into a host quartz substrate

hal.structure.identifierInstitut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
dc.contributor.authorDAVID, T.
hal.structure.identifierInstitut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
dc.contributor.authorARSCOTT, S.
hal.structure.identifierLERMA Cergy [LERMA]
dc.contributor.authorMUNIER, J.M.
hal.structure.identifierInstitut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
dc.contributor.authorDECOOPMAN, Thibaut
hal.structure.identifierInstitut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
dc.contributor.authorAKALIN, Tahsin
hal.structure.identifierCentre de physique moléculaire optique et hertzienne [CPMOH]
dc.contributor.authorMOUNAIX, Patrick
hal.structure.identifierInstitut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
dc.contributor.authorMÉLIQUE, Xavier
hal.structure.identifierInstitut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
dc.contributor.authorVANBÉSIEN, Olivier
hal.structure.identifierLERMA Cergy [LERMA]
dc.contributor.authorBEAUDIN, Gérard
hal.structure.identifierInstitut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
dc.contributor.authorLIPPENS, Didier
dc.date.issued2002
dc.date.conference2002-09-10
dc.description.abstractEnFully integrated monolithic circuits incorporating InP-based heterostructure barrier varactor (HBV) frequency multipliers have been fabricated via epitaxial lift-off and transfer-substrate techniques onto a quartz substrate. We have obtained a maximum output power of 6 mW at 288 GHz corresponding to an overall efficiency of 6%. In addition we have observed a 45 GHz 3 dB bandwidth centered around 300 GHz for a constant input power of 70 mW. We also report on the design of a multiplier block in a fin line technology making use of smoothly corrugated tapered sections for mode matching and filtering
dc.language.isoen
dc.publisherIEEE, Piscataway, NJ, USA
dc.source.titleProceedings of the 10th IEEE International Conference on Terahertz Electronics, THz 2002
dc.subject.enSubstrates
dc.subject.enFrequency
dc.subject.enCircuits
dc.subject.enDiodes
dc.subject.enIndium gallium arsenide
dc.subject.enVaractors
dc.subject.enBandwidth
dc.subject.enMatched filters
dc.subject.enFiltering
dc.subject.enMillimeter wave devices
dc.title.enHigh performance HBV multipliers monolithically integrated into a host quartz substrate
dc.typeCommunication dans un congrès
dc.identifier.doi10.1109/THZ.2002.1037604
dc.subject.halSciences de l'ingénieur [physics]
bordeaux.page113-116
bordeaux.countryGB
bordeaux.title.proceedingProceedings of the 10th IEEE International Conference on Terahertz Electronics, THz 2002
bordeaux.conference.cityCambridge
bordeaux.peerReviewedoui
hal.identifierhal-00148639
hal.version1
hal.invitednon
hal.proceedingsoui
hal.popularnon
hal.audienceInternationale
hal.origin.linkhttps://hal.archives-ouvertes.fr//hal-00148639v1
bordeaux.COinSctx_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.btitle=Proceedings%20of%20the%2010th%20IEEE%20International%20Conference%20on%20Terahertz%20Electronics,%20THz%202002&rft.date=2002&rft.spage=113-116&rft.epage=113-116&rft.au=DAVID,%20T.&ARSCOTT,%20S.&MUNIER,%20J.M.&DECOOPMAN,%20Thibaut&AKALIN,%20Tahsin&rft.genre=unknown


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