DILHAIRE, S.; GRAUBY, Stéphane; CLAEYS, W.; BATSALE, J. C.

doi:10.1016/j.mejo.2004.06.012

Métadonnées

Afficher la notice complète

Licence d’utilisation du document

DILHAIRE, S.
Centre de physique moléculaire optique et hertzienne [CPMOH]

GRAUBY, Stéphane
Centre de physique moléculaire optique et hertzienne [CPMOH]

CLAEYS, W.
Centre de physique moléculaire optique et hertzienne [CPMOH]

Langue

Article de revue

Ce document a été publié dans

Microelectronics Journal. 2004-10, vol. 35, n° 10, p. 811-816

Elsevier

Résumé en anglais

The objective of this paper is the determination of the thermal properties of micrometric layers of electronic devices using a thermoreflectance probe. Unlike classical thermoreflectance methods, the main point of the method presented in this paper is to be able to quantify the heating energy (by Joule effect) and the effective temperature response (by calibration). It is then possible to estimate the thermal conductivity (in W m−1 K−1) instead of the thermal diffusivity (in m2 s−1). A semi-analytical thermal 3D-periodic model then enables to identify a few thermal properties of the layers of the device, and in particular the thermal conductivity of the passivation layer. This methodology has been applied to the study of an industrial device containing interconnect test structures made of copper lines on a silicon wafer with a few micrometers BCB (BenzoCycloButene) polymer passivation layer. The BCB thermal conductivity and the metal heat capacity are obtained using this method.< Réduire

Mots clés en anglais

Thermoreflectance

Calibration

Thermal parameters identification

Thermal conductivity

Microelectronic devices

Laser probing

Métadonnées

Licence d’utilisation du document

Thermal parameters identification of micrometric layers of microelectronic devices by thermoreflectance microscopy

Langue

Ce document a été publié dans

Résumé en anglais

Mots clés en anglais

DOI

Origine

Unités de recherche