Strain energy imaging of a power MOS transistor using speckle interferometry
Idioma
en
Article de revue
Este ítem está publicado en
IEEE Transactions on Reliability. 2004-06, vol. 53, n° 2, p. 293-296
Institute of Electrical and Electronics Engineers
Resumen en inglés
Mechanical characterization of electronic devices is often quite uneasy; most of the techniques used require a contact with the sample under study. In this paper, we propose an optical noncontact interferometric imaging ...Leer más >
Mechanical characterization of electronic devices is often quite uneasy; most of the techniques used require a contact with the sample under study. In this paper, we propose an optical noncontact interferometric imaging method to study the thermomechanical behavior of running devices, and in particular, to deduce the corresponding elastic strain energy. This analysis will permit us to localize the zones of fragility of the device. Results obtained on a power MOS transistor to detect the region of maximum elastic strain energy are presented. It is in particular adapted in microelectronics applications to detect stress accumulation due to dilation coefficient mismatches when assembling microchips.< Leer menos
Palabras clave en inglés
Capacitive sensors
MOSFETs
Speckle
Optical interferometry
Optical imaging
Adaptive optics
Optical devices
Thermomechanical processes
Microelectronics
Stress
Orígen
Importado de HalCentros de investigación