Time gating imaging through thick silicon substrate: a new step towards backside characterisation
Langue
en
Article de revue
Ce document a été publié dans
Microelectronics Reliability. 2006-09, vol. 46, n° 9-11, p. 1520-1524
Elsevier
Résumé en anglais
We propose in this paper a new backside imaging technique. Due to the constant increase ofnumerous metal layers, active areas can no longer be characterized through the frontside component. Nowadays, the most advanced ...Lire la suite >
We propose in this paper a new backside imaging technique. Due to the constant increase ofnumerous metal layers, active areas can no longer be characterized through the frontside component. Nowadays, the most advanced imaging and failure analysis techniques require a modified backside component to allow probing. We propose a technique, where sample preparations are minimized. An optical time gating is used to reduce artefacts coming from the backside surface.< Réduire
Origine
Importé de halUnités de recherche