Time gating imaging through thick silicon substrate: a new step towards backside characterisation
Idioma
en
Article de revue
Este ítem está publicado en
Microelectronics Reliability. 2006-09, vol. 46, n° 9-11, p. 1520-1524
Elsevier
Resumen en inglés
We propose in this paper a new backside imaging technique. Due to the constant increase ofnumerous metal layers, active areas can no longer be characterized through the frontside component. Nowadays, the most advanced ...Leer más >
We propose in this paper a new backside imaging technique. Due to the constant increase ofnumerous metal layers, active areas can no longer be characterized through the frontside component. Nowadays, the most advanced imaging and failure analysis techniques require a modified backside component to allow probing. We propose a technique, where sample preparations are minimized. An optical time gating is used to reduce artefacts coming from the backside surface.< Leer menos
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Importado de HalCentros de investigación