NĚMEC, H.; FEKETE, L.; KADLEC, F.; KUŽEL, P.; MARTIN, M.; MANGENEY, J.; DELAGNES, J. C.; MOUNAIX, P.

doi:10.1103/PHYSREVB.78.235206

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NĚMEC, H.
Institute of Physics

FEKETE, L.
Institute of Physics

KADLEC, F.
Institute of Physics

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Physical Review B: Condensed Matter and Materials Physics (1998-2015). 2008-12, vol. 78, n° 23, p. 235206 (1-7)

American Physical Society

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Ultrafast dynamics of charge carriers in Br+ -bombarded InP were studied using time-resolved terahertz spectroscopy. Carrier lifetimes and mobilities in various samples prepared with irradiation doses spanning from 109 up to 1012cm-2 were determined. The lifetime of photoexcited carriers appears to be determined primarily by the density of defects resulting from host-atom displacements while it is not significantly influenced by the Br-atom implantation. In the most irradiated sample, a carrier lifetime as short as 300 fs was found. All samples exhibit a high mobility (3000-900cm2V-1s-1) ; the lower values correspond to a smaller irradiation dose. In selected samples, the density of traps along with electron and hole lifetimes was determined.< Réduire

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Ultrafast carrier dynamics in Br+ -bombarded InP studied by time-resolved terahertz spectroscopy

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