Optimization of electronic domain-wall properties by aliovalent cation substitution
Idioma
en
Article de revue
Este ítem está publicado en
Advanced Electronic Materials. 2016, vol. 2, n° 1, p. 1500195 (5 p.)
Wiley
Resumen en inglés
Electronic domain-wall conductance is controlled by chemical aliovalent doping in the p-type semiconductor Er1-xCaxMnO3. Coexisting bound (top panel) and mobile (lower panel) charges at the walls are analyzed using ...Leer más >
Electronic domain-wall conductance is controlled by chemical aliovalent doping in the p-type semiconductor Er1-xCaxMnO3. Coexisting bound (top panel) and mobile (lower panel) charges at the walls are analyzed using electrostatic force microscopy. Emergent doping-related variations are quantified by local transport measurements and explained based on phenomenological theories.< Leer menos
Orígen
Importado de HalCentros de investigación