Optimization of electronic domain-wall properties by aliovalent cation substitution
Langue
en
Article de revue
Ce document a été publié dans
Advanced Electronic Materials. 2016, vol. 2, n° 1, p. 1500195 (5 p.)
Wiley
Résumé en anglais
Electronic domain-wall conductance is controlled by chemical aliovalent doping in the p-type semiconductor Er1-xCaxMnO3. Coexisting bound (top panel) and mobile (lower panel) charges at the walls are analyzed using ...Lire la suite >
Electronic domain-wall conductance is controlled by chemical aliovalent doping in the p-type semiconductor Er1-xCaxMnO3. Coexisting bound (top panel) and mobile (lower panel) charges at the walls are analyzed using electrostatic force microscopy. Emergent doping-related variations are quantified by local transport measurements and explained based on phenomenological theories.< Réduire
Origine
Importé de halUnités de recherche