Mostrar el registro sencillo del ítem

A combined EPR and modulated photocurrent study of native defects in Bridgman grown vanadium doped cadmium telluride : the case of the tellurium antisite

hal.structure.identifierInstitut de Chimie de la Matière Condensée de Bordeaux [ICMCB]
hal.structure.identifierCentre Spatial de Liège [CSL]
dc.contributor.authorVERSTRAETEN, David
hal.structure.identifierLaboratoire de génie électrique de Paris [LGEP]
dc.contributor.authorLONGEAUD, Christophe
dc.contributor.authorBEN MAHMOUD, A.
hal.structure.identifierGroupe de Physique des Solides [GPS]
dc.contributor.authorVON BARDELEBEN, H. J.
hal.structure.identifierInstitut de Chimie de la Matière Condensée de Bordeaux [ICMCB]
dc.contributor.authorLAUNAY, Jean-Claude
hal.structure.identifierInstitut de Chimie de la Matière Condensée de Bordeaux [ICMCB]
dc.contributor.authorVIRAPHONG, Oudomsack
hal.structure.identifierCentre Spatial de Liège [CSL]
dc.contributor.authorLEMAIRE, Ph. C.
dc.date.issued2003
dc.description.abstractEnThe electrical and photoconductive properties of Bridgman grown vanadium–zinc co-doped CdTe bulk crystals are strongly influenced by one native intrinsic defect previously attributed to the Te vacancy. In order to identify this defect and control its formation mechanism, a correlated electron paramagnetic resonance (EPR) and modulated photocurrent (MPC) study has been made. The results obtained allow us to attribute this defect to the TeCd antisite, a double donor. By EPR and MPC its +/2+ level position has been determined to Ec - 0.20 eV. Four other centres of minor concentrations were characterized by MPC in as-grown crystals. From the MPC results the density of states for CdTe:V materials has been determined.
dc.language.isoen
dc.subject.enCrystal growth
dc.subject.enBridgman method
dc.subject.enVanadium
dc.subject.enCalcium telluride
dc.subject.enAntisite
dc.subject.enModulated photocurrent
dc.subject.enElectron paramagnetic resonance
dc.title.enA combined EPR and modulated photocurrent study of native defects in Bridgman grown vanadium doped cadmium telluride : the case of the tellurium antisite
dc.typeArticle de revue
dc.identifier.doi10.1088/0268-1242/18/11/303
dc.subject.halChimie/Matériaux
bordeaux.journalSemiconductor Science and Technolgoy
bordeaux.page919-926
bordeaux.volume18
bordeaux.issue11
bordeaux.peerReviewedoui
hal.identifierhal-00182645
hal.version1
hal.popularnon
hal.audienceInternationale
hal.origin.linkhttps://hal.archives-ouvertes.fr//hal-00182645v1
bordeaux.COinSctx_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.jtitle=Semiconductor%20Science%20and%20Technolgoy&rft.date=2003&rft.volume=18&rft.issue=11&rft.spage=919-926&rft.epage=919-926&rft.au=VERSTRAETEN,%20David&LONGEAUD,%20Christophe&BEN%20MAHMOUD,%20A.&VON%20BARDELEBEN,%20H.%20J.&LAUNAY,%20Jean-Claude&rft.genre=article


Archivos en el ítem

ArchivosTamañoFormatoVer

No hay archivos asociados a este ítem.

Este ítem aparece en la(s) siguiente(s) colección(ones)

Mostrar el registro sencillo del ítem