VERSTRAETEN, David; LONGEAUD, Christophe; BEN MAHMOUD, A.; VON BARDELEBEN, H. J.; LAUNAY, Jean-Claude; VIRAPHONG, Oudomsack; LEMAIRE, Ph. C.

doi:10.1088/0268-1242/18/11/303

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VERSTRAETEN, David
Institut de Chimie de la Matière Condensée de Bordeaux [ICMCB]
Centre Spatial de Liège [CSL]

LONGEAUD, Christophe
Laboratoire de génie électrique de Paris [LGEP]

BEN MAHMOUD, A.

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Semiconductor Science and Technolgoy. 2003, vol. 18, n° 11, p. 919-926

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The electrical and photoconductive properties of Bridgman grown vanadium–zinc co-doped CdTe bulk crystals are strongly influenced by one native intrinsic defect previously attributed to the Te vacancy. In order to identify this defect and control its formation mechanism, a correlated electron paramagnetic resonance (EPR) and modulated photocurrent (MPC) study has been made. The results obtained allow us to attribute this defect to the TeCd antisite, a double donor. By EPR and MPC its +/2+ level position has been determined to Ec - 0.20 eV. Four other centres of minor concentrations were characterized by MPC in as-grown crystals. From the MPC results the density of states for CdTe:V materials has been determined.< Leer menos

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Crystal growth

Bridgman method

Vanadium

Calcium telluride

Antisite

Modulated photocurrent

Electron paramagnetic resonance

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A combined EPR and modulated photocurrent study of native defects in Bridgman grown vanadium doped cadmium telluride : the case of the tellurium antisite

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