A combined EPR and modulated photocurrent study of native defects in Bridgman grown vanadium doped cadmium telluride : the case of the tellurium antisite
VERSTRAETEN, David
Institut de Chimie de la Matière Condensée de Bordeaux [ICMCB]
Centre Spatial de Liège [CSL]
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Institut de Chimie de la Matière Condensée de Bordeaux [ICMCB]
Centre Spatial de Liège [CSL]
VERSTRAETEN, David
Institut de Chimie de la Matière Condensée de Bordeaux [ICMCB]
Centre Spatial de Liège [CSL]
< Reduce
Institut de Chimie de la Matière Condensée de Bordeaux [ICMCB]
Centre Spatial de Liège [CSL]
Language
en
Article de revue
This item was published in
Semiconductor Science and Technolgoy. 2003, vol. 18, n° 11, p. 919-926
English Abstract
The electrical and photoconductive properties of Bridgman grown vanadium–zinc co-doped CdTe bulk crystals are strongly influenced by one native intrinsic defect previously attributed to the Te vacancy. In order to identify ...Read more >
The electrical and photoconductive properties of Bridgman grown vanadium–zinc co-doped CdTe bulk crystals are strongly influenced by one native intrinsic defect previously attributed to the Te vacancy. In order to identify this defect and control its formation mechanism, a correlated electron paramagnetic resonance (EPR) and modulated photocurrent (MPC) study has been made. The results obtained allow us to attribute this defect to the TeCd antisite, a double donor. By EPR and MPC its +/2+ level position has been determined to Ec - 0.20 eV. Four other centres of minor concentrations were characterized by MPC in as-grown crystals. From the MPC results the density of states for CdTe:V materials has been determined.Read less <
English Keywords
Crystal growth
Bridgman method
Vanadium
Calcium telluride
Antisite
Modulated photocurrent
Electron paramagnetic resonance
Origin
Hal imported