ROGERS, D. J.; LOOK, D. C.; HOSSEINI TEHERANI, F.; MINDER, K.; RAZEGHI, M.; LARGETEAU, Alain; DEMAZEAU, Gérard; MORROD, J.; PRIOR, K. A.; LUSSON, A.; HASSANI, S.

doi:10.1002/pssc.200779315

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ROGERS, D. J.
Nanovation SARL

LOOK, D. C.
Semiconductor Research Center

HOSSEINI TEHERANI, F.
Nanovation SARL

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physica status solidi (c). 2008, vol. 5, n° 9, p. 3084-3087

Wiley

Résumé en anglais

ZnO films were deposited on c-Al2O3 using pulsed laser deposition both with and without N2 in the growth ambient. X-ray diffraction revealed poorer crystal quality and surface morphology for one-step growths with N2 in the ambient. A marked improvement in both the crystallographic and surface quality was obtained through use of two-step growths employing nominally undoped ZnO buffer layers prior to growth with N2 in the ambient. All films showed majority n-type conduction in Hall measurements. Post-annealing for 30 minutes at 600 ºC in O2 systematically reduced both the carrier concentration and the conductivity. A base room temperature carrier concentration of 1016 cm-3 was linked to Al diffusing from the substrate. 4.2 K photoluminescence spectra exhibited blue bands associated with the growths having N2 in the ambient. Temperature dependent Hall measurements were consistent with N being incorporated in the films. Processed devices did not, however, show rectifying behaviour or electroluminescence.< Réduire

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X-ray diffraction

Thin film structure

Morphology

II–VI semiconductors

Laser deposition

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Investigations of ZnO thin films grown on c-Al2O3 by pulsed laser deposition in N2 + O2 ambient

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