Investigations of ZnO thin films grown on c-Al2O3 by pulsed laser deposition in N2 + O2 ambient
| hal.structure.identifier | Nanovation SARL | |
| dc.contributor.author | ROGERS, D. J. | |
| hal.structure.identifier | Semiconductor Research Center | |
| dc.contributor.author | LOOK, D. C. | |
| hal.structure.identifier | Nanovation SARL | |
| dc.contributor.author | HOSSEINI TEHERANI, F. | |
| hal.structure.identifier | Center for Quantum Devices | |
| dc.contributor.author | MINDER, K. | |
| hal.structure.identifier | Center for Quantum Devices | |
| dc.contributor.author | RAZEGHI, M. | |
| hal.structure.identifier | Institut de Chimie de la Matière Condensée de Bordeaux [ICMCB] | |
| dc.contributor.author | LARGETEAU, Alain | |
| hal.structure.identifier | Institut de Chimie de la Matière Condensée de Bordeaux [ICMCB] | |
| dc.contributor.author | DEMAZEAU, Gérard | |
| hal.structure.identifier | Physics Department [HWU, Edinburgh] | |
| dc.contributor.author | MORROD, J. | |
| hal.structure.identifier | Physics Department [HWU, Edinburgh] | |
| dc.contributor.author | PRIOR, K. A. | |
| hal.structure.identifier | Groupe d'Etude de la Matière Condensée [GEMAC] | |
| dc.contributor.author | LUSSON, A. | |
| hal.structure.identifier | Groupe d'Etude de la Matière Condensée [GEMAC] | |
| dc.contributor.author | HASSANI, S. | |
| dc.date.issued | 2008 | |
| dc.identifier.issn | 1610-1634 | |
| dc.description.abstractEn | ZnO films were deposited on c-Al2O3 using pulsed laser deposition both with and without N2 in the growth ambient. X-ray diffraction revealed poorer crystal quality and surface morphology for one-step growths with N2 in the ambient. A marked improvement in both the crystallographic and surface quality was obtained through use of two-step growths employing nominally undoped ZnO buffer layers prior to growth with N2 in the ambient. All films showed majority n-type conduction in Hall measurements. Post-annealing for 30 minutes at 600 ºC in O2 systematically reduced both the carrier concentration and the conductivity. A base room temperature carrier concentration of 1016 cm-3 was linked to Al diffusing from the substrate. 4.2 K photoluminescence spectra exhibited blue bands associated with the growths having N2 in the ambient. Temperature dependent Hall measurements were consistent with N being incorporated in the films. Processed devices did not, however, show rectifying behaviour or electroluminescence. | |
| dc.language.iso | en | |
| dc.publisher | Wiley | |
| dc.subject.en | X-ray diffraction | |
| dc.subject.en | Thin film structure | |
| dc.subject.en | Morphology | |
| dc.subject.en | II–VI semiconductors | |
| dc.subject.en | Laser deposition | |
| dc.title.en | Investigations of ZnO thin films grown on c-Al2O3 by pulsed laser deposition in N2 + O2 ambient | |
| dc.type | Article de revue | |
| dc.identifier.doi | 10.1002/pssc.200779315 | |
| dc.subject.hal | Chimie/Matériaux | |
| bordeaux.journal | physica status solidi (c) | |
| bordeaux.page | 3084-3087 | |
| bordeaux.volume | 5 | |
| bordeaux.issue | 9 | |
| bordeaux.peerReviewed | oui | |
| hal.identifier | hal-00292362 | |
| hal.version | 1 | |
| hal.popular | non | |
| hal.audience | Internationale | |
| hal.origin.link | https://hal.archives-ouvertes.fr//hal-00292362v1 | |
| bordeaux.COinS | ctx_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.jtitle=physica%20status%20solidi%20(c)&rft.date=2008&rft.volume=5&rft.issue=9&rft.spage=3084-3087&rft.epage=3084-3087&rft.eissn=1610-1634&rft.issn=1610-1634&rft.au=ROGERS,%20D.%20J.&LOOK,%20D.%20C.&HOSSEINI%20TEHERANI,%20F.&MINDER,%20K.&RAZEGHI,%20M.&rft.genre=article |
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