PHILIPPOT, Gilles; ALBINO, Marjorie; EPHERRE, Romain; CHEVALLIER, Geoffroy; BEYNET, Yannick; MANIÈRE, Charles; WEIBEL, Alicia; PEIGNEY, Alain; DELUCA, Marco; ELISSALDE, Catherine; MAGLIONE, Mario; AYMONIER, Cyril; ESTOURNÈS, Claude

doi:10.1002/aelm.201500190

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PHILIPPOT, Gilles
Institut de Chimie de la Matière Condensée de Bordeaux [ICMCB]

ALBINO, Marjorie
Institut de Chimie de la Matière Condensée de Bordeaux [ICMCB]

EPHERRE, Romain
Centre interuniversitaire de recherche et d'ingénierie des matériaux [CIRIMAT]

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Article de revue

Ce document a été publié dans

Advanced Electronic Materials. 2015, vol. 1, n° 10, p. 1500190 (8 p.)

Wiley

Résumé en anglais

Ferroelectric materials are highly sensitive to grain size reduction because strain and ferroelectric polarization have a direct connection. Using 15 nm (Ba,Sr)TiO3 particles obtained by advanced supercritical synthesis and their densification by high-pressure spark plasma sintering under air, reproducible and dense nanostructured ceramics are achieved. Taking advantage of the high pressure (up to 600 MPa) applied during the sintering step, the internal stress generated at the grain scale can be monitored to compensate for the particle surface stress due to size effect. Both the local dynamics observed by Raman scattering and the overall dielectric behavior consistently indicate a recovery of the ferroelectric properties as the sintering pressure is increased. This unique behavior shows that low-temperature and high-pressure processing enables designing nanostructured functional ceramics exhibiting original properties.< Réduire

Mots clés en anglais

dielectrics

nanostructures

structure–property relationships

ceramics

DOI

http://dx.doi.org/10.1002/aelm.201500190

Project ANR

Corrélations entre Architecture, Interfaces et Fonctionnalités dans les multi-matériaux Ferroélectriques :Frittage Flash et caractérisations multi-échelle 3D - ANR-12-BS08-0009

Origine

Importé de hal

Unités de recherche

Institut de Chimie de la Matière Condensée de Bordeaux (ICMCB) - UMR 5026