Presence of Peierls pairing and absence of insulator-to-metal transition in VO2 (A): a structure-property relationship study.
POPURI, Srinivasa Rao
Institute of Chemical Sciences and Centre for Advanced Energy Storage and Recovery
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Institute of Chemical Sciences and Centre for Advanced Energy Storage and Recovery
POPURI, Srinivasa Rao
Institute of Chemical Sciences and Centre for Advanced Energy Storage and Recovery
< Réduire
Institute of Chemical Sciences and Centre for Advanced Energy Storage and Recovery
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en
Article de revue
Ce document a été publié dans
Physical Chemistry Chemical Physics. 2017, vol. 19, n° 9, p. 6601-6609
Royal Society of Chemistry
Résumé en anglais
Layered vanadium oxides have been extensively explored due to their interesting metal-insulator transitions and energy conversion/storage applications. In the present study, we have successfully synthesized VO2 (A) polymorph ...Lire la suite >
Layered vanadium oxides have been extensively explored due to their interesting metal-insulator transitions and energy conversion/storage applications. In the present study, we have successfully synthesized VO2 (A) polymorph powder samples by a single-step hydrothermal synthesis process and consolidated them using spark plasma sintering. The structural and electronic properties of VO2 (A) are measured over a large temperature range from liquid helium, across the structural transition (400-440 K) and up to 500 K. The structural analysis around this transition reveals an antiferrodistorsive to partially ferrodistorsive ordering upon cooling. It is followed by a progressive antiferromagnetic spin pairing which fully settles at about 150 K. The transport measurements show that, in contrast to the rutile archetype VO2 (R/M1), the structural transition comes with a transition from semiconductor to band-type insulator. Under these circumstances, we propose a scenario with a high temperature antiferrodistorsive paramagnetic semiconducting phase, followed by an intermediate regime with a partially ferrodistorsive paramagnetic semiconducting phase, and finally a low temperature partially ferrodistorsive antiferromagnetic band insulator phase with a possible V-V Peierls-type pairing.< Réduire
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