The system will be going down for regular maintenance. Please save your work and logout.

Show simple item record

hal.structure.identifierInstitute of Chemical Sciences and Centre for Advanced Energy Storage and Recovery
dc.contributor.authorPOPURI, Srinivasa Rao
hal.structure.identifierInstitut de Chimie de la Matière Condensée de Bordeaux [ICMCB]
dc.contributor.authorARTEMENKO, Alla
hal.structure.identifierInstitut de Chimie de la Matière Condensée de Bordeaux [ICMCB]
dc.contributor.authorDECOURT, Rodolphe
hal.structure.identifierInstitut de Chimie de la Matière Condensée de Bordeaux [ICMCB]
dc.contributor.authorVILLESUZANNE, Antoine
hal.structure.identifierInstitut de Chimie de la Matière Condensée de Bordeaux [ICMCB]
dc.contributor.authorPOLLET, Michaël
dc.date.issued2017
dc.identifier.issn1463-9076
dc.description.abstractEnLayered vanadium oxides have been extensively explored due to their interesting metal-insulator transitions and energy conversion/storage applications. In the present study, we have successfully synthesized VO2 (A) polymorph powder samples by a single-step hydrothermal synthesis process and consolidated them using spark plasma sintering. The structural and electronic properties of VO2 (A) are measured over a large temperature range from liquid helium, across the structural transition (400-440 K) and up to 500 K. The structural analysis around this transition reveals an antiferrodistorsive to partially ferrodistorsive ordering upon cooling. It is followed by a progressive antiferromagnetic spin pairing which fully settles at about 150 K. The transport measurements show that, in contrast to the rutile archetype VO2 (R/M1), the structural transition comes with a transition from semiconductor to band-type insulator. Under these circumstances, we propose a scenario with a high temperature antiferrodistorsive paramagnetic semiconducting phase, followed by an intermediate regime with a partially ferrodistorsive paramagnetic semiconducting phase, and finally a low temperature partially ferrodistorsive antiferromagnetic band insulator phase with a possible V-V Peierls-type pairing.
dc.language.isoen
dc.publisherRoyal Society of Chemistry
dc.title.enPresence of Peierls pairing and absence of insulator-to-metal transition in VO2 (A): a structure-property relationship study.
dc.typeArticle de revue
dc.identifier.doi10.1039/C7CP00248C
dc.subject.halChimie/Matériaux
dc.subject.halChimie/Chimie inorganique
bordeaux.journalPhysical Chemistry Chemical Physics
bordeaux.page6601-6609
bordeaux.volume19
bordeaux.issue9
bordeaux.peerReviewedoui
hal.identifierhal-01490262
hal.version1
hal.popularnon
hal.audienceInternationale
hal.origin.linkhttps://hal.archives-ouvertes.fr//hal-01490262v1
bordeaux.COinSctx_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.jtitle=Physical%20Chemistry%20Chemical%20Physics&rft.date=2017&rft.volume=19&rft.issue=9&rft.spage=6601-6609&rft.epage=6601-6609&rft.eissn=1463-9076&rft.issn=1463-9076&rft.au=POPURI,%20Srinivasa%20Rao&ARTEMENKO,%20Alla&DECOURT,%20Rodolphe&VILLESUZANNE,%20Antoine&POLLET,%20Micha%C3%ABl&rft.genre=article


Files in this item

FilesSizeFormatView

There are no files associated with this item.

This item appears in the following Collection(s)

Show simple item record